Conductivity switching and memory effect in polymer brushes with carbazole pendant moieties
Identifieur interne : 000601 ( Chine/Analysis ); précédent : 000600; suivant : 000602Conductivity switching and memory effect in polymer brushes with carbazole pendant moieties
Auteurs : RBID : Pascal:12-0302788Descripteurs français
- Pascal (Inist)
- Brosse polymère, Méthacrylate polymère, Carbazole dérivé polymère, Polymère monodispersé, Couche ITO, Aluminium, Fabrication, Polymérisation transfert atome, Réaction surface, Topographie surface, Microrugosité, Caractéristique courant temps, Caractéristique courant tension, Seuil tension, Effet mémoire, Mémoire non volatile, Etude expérimentale, Méthacrylate de 2-[9-carbazolyl]éthyle polymère, Rapport courant ON/OFF.
- Wicri :
- concept : Aluminium.
English descriptors
- KwdEn :
- Aluminium, Atom transfer polymerization, Carbazole derivative polymer, Current time characteristic, Experimental study, ITO layers, Manufacturing, Memory effect, Methacrylate polymer, Microroughness, Monodispersed polymer, Non volatile memory, Polymer brush, Surface reaction, Surface topography, Voltage current curve, Voltage threshold.
Abstract
In this paper, poly(2-(N-carbazolyl)ethyl methacrylate) (PCEM) brushes have been prepared on the indium-tin oxide (ITO) surfaces via surface-initiated atom transfer radical polymerization (ATRP) using a silane coupling agent containing the initiator moiety. Films of PCEM brushes between bottom ITO electrode and Al top electrode are sandwiched to fabricate the ITO-g-PCEM/Al device. The device exhibits two conductivity states and can be switched from the initial low-conductivity (OFF) state to the high-conductivity (ON) state at the switching threshold voltages of -1.5 V with the ON/OFF current ratio up to 106. The ON state of the device is nonvolatile and can withstand 106 pulse read cycles at -0.8 V under ambient conditions. Upon reversing the bias, the ON state cannot be reset to the initial OFF states. The ITO-g-PCEM/Al device behaves as a write-once read-many-times (WORM) memory. Compared with that of the conventional ITO/PCEM/Al device fabricated by spin-coating, the switching voltage is lower in the ITO-g-PCEM/AI memory device.
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Pascal:12-0302788Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Conductivity switching and memory effect in polymer brushes with carbazole pendant moieties</title><author><name>YANG LIU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory for Green Chemical Process of Ministry of Education, School of Materials Science and Engineering, Wuhan Institute of Technology</s1><s2>Wuhan 430073</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Wuhan 430073</wicri:noRegion></affiliation></author><author><name sortKey="Lv, Shujun" uniqKey="Lv S">Shujun Lv</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory for Green Chemical Process of Ministry of Education, School of Materials Science and Engineering, Wuhan Institute of Technology</s1><s2>Wuhan 430073</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Wuhan 430073</wicri:noRegion></affiliation></author><author><name>LIANGLI</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory for Green Chemical Process of Ministry of Education, School of Materials Science and Engineering, Wuhan Institute of Technology</s1><s2>Wuhan 430073</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Wuhan 430073</wicri:noRegion></affiliation></author><author><name>SONGMIN SHANG</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Textiles and Clothing, The Hong Kong Polytechnic University</s1><s2>Hung Hom, Kowloon</s2><s3>HKG</s3><sZ>4 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Hung Hom, Kowloon</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0302788</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0302788 INIST</idno><idno type="RBID">Pascal:12-0302788</idno><idno type="wicri:Area/Main/Corpus">001A71</idno><idno type="wicri:Area/Main/Repository">001F04</idno><idno type="wicri:Area/Chine/Extraction">000601</idno></publicationStmt><seriesStmt><idno type="ISSN">0379-6779</idno><title level="j" type="abbreviated">Synth. met.</title><title level="j" type="main">Synthetic metals</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium</term><term>Atom transfer polymerization</term><term>Carbazole derivative polymer</term><term>Current time characteristic</term><term>Experimental study</term><term>ITO layers</term><term>Manufacturing</term><term>Memory effect</term><term>Methacrylate polymer</term><term>Microroughness</term><term>Monodispersed polymer</term><term>Non volatile memory</term><term>Polymer brush</term><term>Surface reaction</term><term>Surface topography</term><term>Voltage current curve</term><term>Voltage threshold</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Brosse polymère</term><term>Méthacrylate polymère</term><term>Carbazole dérivé polymère</term><term>Polymère monodispersé</term><term>Couche ITO</term><term>Aluminium</term><term>Fabrication</term><term>Polymérisation transfert atome</term><term>Réaction surface</term><term>Topographie surface</term><term>Microrugosité</term><term>Caractéristique courant temps</term><term>Caractéristique courant tension</term><term>Seuil tension</term><term>Effet mémoire</term><term>Mémoire non volatile</term><term>Etude expérimentale</term><term>Méthacrylate de 2-[9-carbazolyl]éthyle polymère</term><term>Rapport courant ON/OFF</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Aluminium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this paper, poly(2-(N-carbazolyl)ethyl methacrylate) (PCEM) brushes have been prepared on the indium-tin oxide (ITO) surfaces via surface-initiated atom transfer radical polymerization (ATRP) using a silane coupling agent containing the initiator moiety. Films of PCEM brushes between bottom ITO electrode and Al top electrode are sandwiched to fabricate the ITO-g-PCEM/Al device. The device exhibits two conductivity states and can be switched from the initial low-conductivity (OFF) state to the high-conductivity (ON) state at the switching threshold voltages of -1.5 V with the ON/OFF current ratio up to 10<sup>6</sup>. The ON state of the device is nonvolatile and can withstand 10<sup>6</sup> pulse read cycles at -0.8 V under ambient conditions. Upon reversing the bias, the ON state cannot be reset to the initial OFF states. The ITO-g-PCEM/Al device behaves as a write-once read-many-times (WORM) memory. Compared with that of the conventional ITO/PCEM/Al device fabricated by spin-coating, the switching voltage is lower in the ITO-g-PCEM/AI memory device.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0379-6779</s0></fA01><fA02 i1="01"><s0>SYMEDZ</s0></fA02><fA03 i2="1"><s0>Synth. met.</s0></fA03><fA05><s2>162</s2></fA05><fA06><s2>13-14</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Conductivity switching and memory effect in polymer brushes with carbazole pendant moieties</s1></fA08><fA11 i1="01" i2="1"><s1>YANG LIU</s1></fA11><fA11 i1="02" i2="1"><s1>LV (Shujun)</s1></fA11><fA11 i1="03" i2="1"><s1>LIANGLI</s1></fA11><fA11 i1="04" i2="1"><s1>SONGMIN SHANG</s1></fA11><fA14 i1="01"><s1>Key Laboratory for Green Chemical Process of Ministry of Education, School of Materials Science and Engineering, Wuhan Institute of Technology</s1><s2>Wuhan 430073</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Textiles and Clothing, The Hong Kong Polytechnic University</s1><s2>Hung Hom, Kowloon</s2><s3>HKG</s3><sZ>4 aut.</sZ></fA14><fA20><s1>1059-1064</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18315</s2><s5>354000506638560010</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>39 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0302788</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Synthetic metals</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In this paper, poly(2-(N-carbazolyl)ethyl methacrylate) (PCEM) brushes have been prepared on the indium-tin oxide (ITO) surfaces via surface-initiated atom transfer radical polymerization (ATRP) using a silane coupling agent containing the initiator moiety. Films of PCEM brushes between bottom ITO electrode and Al top electrode are sandwiched to fabricate the ITO-g-PCEM/Al device. The device exhibits two conductivity states and can be switched from the initial low-conductivity (OFF) state to the high-conductivity (ON) state at the switching threshold voltages of -1.5 V with the ON/OFF current ratio up to 10<sup>6</sup>. The ON state of the device is nonvolatile and can withstand 10<sup>6</sup> pulse read cycles at -0.8 V under ambient conditions. Upon reversing the bias, the ON state cannot be reset to the initial OFF states. The ITO-g-PCEM/Al device behaves as a write-once read-many-times (WORM) memory. Compared with that of the conventional ITO/PCEM/Al device fabricated by spin-coating, the switching voltage is lower in the ITO-g-PCEM/AI memory device.</s0></fC01><fC02 i1="01" i2="X"><s0>001D09D02E</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F02</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Brosse polymère</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Polymer brush</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Cepillo polímero</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Méthacrylate polymère</s0><s2>NK</s2><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Methacrylate polymer</s0><s2>NK</s2><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Metacrilato polímero</s0><s2>NK</s2><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Carbazole dérivé polymère</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Carbazole derivative polymer</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Carbazol derivado polímero</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Polymère monodispersé</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Monodispersed polymer</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Polímero monodispersado</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Couche ITO</s0><s1>SUB</s1><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>ITO layers</s0><s1>SUB</s1><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Aluminium</s0><s2>NC</s2><s2>FR</s2><s2>FX</s2><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Aluminium</s0><s2>NC</s2><s2>FR</s2><s2>FX</s2><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Aluminio</s0><s2>NC</s2><s2>FR</s2><s2>FX</s2><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Fabrication</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Manufacturing</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Fabricación</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Polymérisation transfert atome</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Atom transfer polymerization</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Polimerización transferencia atomo</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Réaction surface</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Surface reaction</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Reacción superficie</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Topographie surface</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Surface topography</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Microrugosité</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Microroughness</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Microrugosidad</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Caractéristique courant temps</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Current time characteristic</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Característica corriente tiempo</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Caractéristique courant tension</s0><s5>14</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Voltage current curve</s0><s5>14</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Característica corriente tensión</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Seuil tension</s0><s5>15</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Voltage threshold</s0><s5>15</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Umbral tensión</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Effet mémoire</s0><s5>17</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Memory effect</s0><s5>17</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Efecto memoria</s0><s5>17</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Mémoire non volatile</s0><s5>18</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Non volatile memory</s0><s5>18</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Memoria no volátil</s0><s5>18</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Etude expérimentale</s0><s5>19</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Experimental study</s0><s5>19</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Estudio experimental</s0><s5>19</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Méthacrylate de 2-[9-carbazolyl]éthyle polymère</s0><s2>NK</s2><s4>INC</s4><s5>32</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Rapport courant ON/OFF</s0><s4>INC</s4><s5>33</s5></fC03><fN21><s1>233</s1></fN21><fN44 i1="01"><s1>PSI</s1></fN44><fN82><s1>PSI</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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